maximum ratings all ratings per die: t c = 25c unless otherwise speci ed . ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated super junction mosfet c power semiconductors o o l mos "coolmos? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag." g d s unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made with two parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. microsemi website - http://www.microsemi.com APT97N65B2C6 apt97n65lc6 650v 97a 0.041 symbol parameter apt97n65b2_lc6 unit v dss drain-source voltage 650 volts i d continuous drain current @ t c = 25c 1 (assuming rdson max = 0.041 ) 97 amps continuous drain current @ t c = 100c 62 i dm pulsed drain current 2 291 v gs gate-source voltage continuous 20 volts p d total power dissipation @ t c = 25c 862 watts t j ,t stg operating and storage junction temperature range -55 - to 150 c t l lead temperature: 0.063" from case for 10 sec. 260 i ar avalanche current 2 13.4 amps e ar repetitive avalanche energy 3 ( id = 13.4a, vdd = 50v ) 2.96 e as single pulse avalanche energy ( id = 13.4a, vdd = 50v ) 1954 mj symbol characteristic / test conditions min typ max unit bv (dss) drain-source breakdown voltage (v gs = 0v, i d = 250 a) 650 volts r ds(on) drain-source on-state resistance 4 (v gs = 10v, i d = 48.5a) 0.037 0.041 ohms i dss zero gate voltage drain current (v ds = 650v, v gs = 0v) 25 a zero gate voltage drain current (v ds = 650v, v gs = 0v, t c = 150c) 250 i gss gate-source leakage current (v gs = 20v, v ds = 0v) 100 na v gs(th) gate threshold voltage (v ds = v gs , i d = 2.96ma) 2.5 3 3.5 volts static electrical characteristics caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. 050-7212 rev a 2-2011 to-264 t-max ? APT97N65B2C6 apt97n65lc6
apt97n65b2_lc6 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10 -5 10 -4 10 -3 10 -2 0.1 1 10 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: dynamic characteristics source-drain diode ratings and characteristics thermal characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1 mhz 7650 pf c oss output capacitance 5045 c rss reverse transfer capacitance 550 q g total gate charge 5 v gs = 10v v dd = 325v i d = 97a @ 25c 300 nc q gs gate-source charge 50 q gd gate-drain ("miller ") charge 160 t d(on) turn-on delay time inductive switching v gs = 15v v dd = 433v i d = 97a @ 25c r g = 2.2 25 ns t r rise time 60 t d(off) turn-off delay time 275 t f fall time 130 e on turn-on switching energy 6 inductive switching @ 25c v dd = 433v, v gs = 15v i d = 97a, r g = 2.2 2860 j e off turn-off switching energy 3500 e on turn-on switching energy 6 inductive switching @ 125c v dd = 433v, v gs = 15v i d =97a, r g = 2.2 4030 e off turn-off switching energy 3695 symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 97 amps i sm pulsed source current 2 (body diode) 291 v sd diode forward voltage 4 (v gs = 0v, i s = -48.5a) 0.9 1.2 volts dv / dt peak diode recovery dv / dt 7 50 v/ns t rr reverse recovery time (i s = -97a, di / dt = 100a/ s) t j = 25c 790 ns q rr reverse recovery charge (i s = -97a, di / dt = 100a/ s) t j = 25c 19 c i rrm peak recovery current (i s = -97a, di / dt = 100a/ s) t j = 25c 43 amps symbol characteristic min typ max unit r jc junction to case 0.145 c/w r ja junction to ambient 40 1 continuous current limited by package lead temperature. 2 repetitive rating: pulse width limited by maximum junction temperature 3 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. microsemi reserves the right to change, without notice, the speci cations and information contained herein. 4 pulse test: pulse width < 380 s, duty cycle < 2% 5 see mil-std-750 method 3471 6 eon includes diode reverse recovery. 7 maximum 125c diode commutation speed = di/dt 600a/ s 050-7212 rev a 2-2011
050-7212 rev a 2-2011 typical performance curves apt97n65b2_lc6 0.70 0.80 0.90 1.00 1.10 1.20 -50 0 50 100 150 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 0 50 100 150 0 0.40 0.80 1.20 1.60 2.00 0 50 100 150 200 250 0 20 40 60 80 100 25 50 75 100 125 150 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 6.5v 15v v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current i dr , reverse t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0 0.50 1.00 1.50 2.00 2.50 3.00 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) 4.5v 5.5v 6v 5v v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 48.5a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 0.10 1 10 100 1000 1 10 100 1000 1ms 100ms 100s 10ms 10s 7v 10v rds on
050-7212 rev a 2-2011 typical performance curves apt97n65b2_lc6 0 4000 8000 12000 16000 20000 0 10 20 30 40 50 60 70 0 50 100 150 200 250 0 40 80 120 160 200 1 10 100 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 100 200 300 400 0 40 80 120 160 200 0 2 4 6 8 10 12 14 0 100 200 300 400 10 100 1000 10,000 100,000 0 10 20 30 40 50 c iss t j = =25c v ds = 520v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 325v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 40 80 120 160 200 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 97a v dd = 430v r g = 2.2 t j = 125c l = 100 h t d(on) t d(off) v dd = 430v r g = 2.2 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 430v r g = 2.2 t j = 125c l = 100 h t r t f e on e off v dd = 430v i d = 97a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 130v
figure 17, turn-on switching waveforms and de nitions figure 18, turn-off switching waveforms and de nitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit t j = 125c collector current collector voltage gate voltage 10% t d(on) 90% 10% t r 5% switching energy t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) e3 100% sn plated to-264 (l) package outline t-max ? (b2) package outline 1.016(.040) 050-7212 rev a 2-2011 typical performance curves apt97n65b2_lc6
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